08/07/2008 • Laboratory appliances • Microscopy / Imaging

LEXT OLS3000IR: semiconductor inspection from the inside:

Olympus has introduced its OLS3000IR LEXT IR confocal laser scanning microscope – the latest member of its near-IR silicon inspection microscope range. Designed for the non-destructive, high resolution observation of the interior of silicon wafers, IC chips, MEMS and other devices, the LEXT IR uses a 1310 nm laser to literally see through the silicon to the components.

Packaging technology of semiconductor devices is rapidly advancing along with the increase in the need for thinner and smaller electronics devices. This makes observation for research or quality control almost impossible, with many components and even circuits packed into a tight space. Joining the Olympus MX (inverted) and BX2M and BXFM (upright) silicon imaging systems, the LEXT OLS3000IR uses an infrared laser to illuminate features that cannot be seen visually - such as SIP (System in Package), 3-dimensional mounting, and CSP (Chip Scale Package) - to be inspected, measured and analysed without any destructive preparation.

The LEXT platform was first developed for advanced metrology and surface analysis using a UV laser. With an IR laser the LEXT OLS3000IR is perfect for silicon device inspection, providing fast, efficient and as easy-to-use capabilities for ultra-fine subsurface resolution with SEM-like clarity for a wide range of imaging tasks:

Flip chip mounting defect analysis
In flip chip bonding, once mounted the pattern cannot be inspected using visible light. However, the silicon chip is transparent to infrared light and the interior can be observed without destroying the mounted chip. Defect analysis is easily performed by merely placing the device under the LEXT OLS3100IR.

Chip damage analysis
With the LEXT OLS3100IR, device changes during heat and moisture tests can be inspected non-destructively. Fore example, leakage due to melting and corrosion of copper wiring, peeling of resin parts, etc. can all be clearly observed.

Chip gap measurement
Three-dimensional mounting chip gap can be measured as the movement of the objective when infrared light is passed through the silicon then focused on the chip and interposer. This method can also be used in the measurement of key features in micro-electromechanial systems (MEMS).

A World leading IR Team
As well as the peerless LEXT OLS3000IR, the Olympus IR microscope system range provides non-destructive inspection capabilities for all silicon-based circuits, whatever the requirements. The inverted MX series is perfect for the observation of 150-200 mm wafers. The upright BX2M microscopes offer transmitted illumination and the BXFM is equipment oriented modular optical unit enabling it to be integrated into other pieces of equipment, such as production lines for in situ inspection.

This product information
is expired!

Use our search-function for current products ...
gradient arrows

Olympus Life and Material Science Europa GmbH

Wendenstr. 14-18
20097 Hamburg

Phone: +49 (0)40/23 77 3-0
Fax: +49 (0)40/23 08 17